2N3789
2N3790
2N3791
2N3792
SILICON
PNP POWER TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,
2N3791, and 2N3792 are silicon PNP power transistors,
manufactured by the epitaxial planar process, designed
for medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
2N3789
2N3791
60
SYMBOL
VCBO
VCEO
2N3790
2N3792
80
60
UNITS
V
80
V
VEBO
IC
7.0
V
10
A
IB
PD
4.0
A
150
W
-65 to +200
°C
1.17
°C/W
TJ, Tstg
JC
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N3789
2N3791
SYMBOL
TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEO, VEB=1.5V
1.0
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
5.0
2N3790
2N3792
MIN MAX
1.0
UNITS
mA
-
5.0
mA
5.0
-
5.0
mA
60
-
80
-
V
-
1.0
-
1.0
V
-
1.0
-
1.0
V
VCE=2.0V, IC=5.0A (2N3789, 2N3790)
VCE=2.0V, IC=5.0A (2N3791, 2N3792)
-
2.0
-
2.0
V
-
1.8
-
1.8
V
VBE(ON)
hFE
VCE=4.0V, IC=10A
VCE=2.0V, IC=1.0A (2N3789, 2N3790)
-
4.0
-
4.0
V
25
90
25
90
hFE
hFE
VCE=2.0V, IC=1.0A (2N3791, 2N3792)
VCE=2.0V, IC=3.0A (2N3789, 2N3790)
50
180
50
180
15
-
15
-
hFE
fT
VCE=2.0V, IC=3.0A (2N3791, 2N3792)
VCE=10V, IC=500mA, f=1.0MHz
30
-
30
-
4.0
-
4.0
-
IEBO
BVCEO
VEB=7.0V
IC=200mA
VCE(SAT)
VCE(SAT)
IC=4.0A, IB=400mA (2N3789, 2N3790)
IC=5.0A, IB=500mA (2N3791, 2N3792)
VBE(ON)
VBE(ON)
-
MHz
R2 (31-July 2013)
2N3789
2N3790
2N3791
2N3792
SILICON
PNP POWER TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
R2
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R2 (31-July 2013)
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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www.centralsemi.com
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